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If an abrupt change in impurity type from acceptors (p-type) to donors (n-type) occurs within a single crystal structure, a p-n junction is formed (see parts B and C of the figure). On the p side, the holes constitute the dominant carriers and so are called majority carriers. A few thermally generated electrons will also exist in the p side; these are termed minority carriers. On the n side, the electrons are the majority carriers, while the holes are the minority carriers. Near the junction is a region having no free charge carriers. This region, called the depletion layer, behaves ...(100 of 1706 words)